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Diode characteristics of Li3N-diffused ZnSe grown by MOVPE |
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| Authors: | T Honda S W Lim K Inoue K Hara H Munekata H Kukimoto F Koyama K Iga |
| Institution: | a Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan b Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan |
| Abstract: | We have fabricated a ZnSe diode using Li3N diffusion technique for the purpose of forming p-type ZnSe. The maximum hole concentration in the Li3N-diffused ZnSe layer, which has been grown on a GaAs substrate by metalorganic vapor phase epitaxy, was as high as 1018 cm?3. The ohmic contact to the p-type ZnSe has been demonstrated and the specific contact resistance of Au/p-ZnSe was 1 × 10?2 Ω · cm2. The Li3N diffusion technique is useful for the bfabrication of ohmic contacts to p-ZnSe. |
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