| 高性能金属诱导单向横向晶化多晶硅薄膜晶体管技术和应用 |
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| 引用本文： | 王文,孟志国,郭海成.高性能金属诱导单向横向晶化多晶硅薄膜晶体管技术和应用[J].液晶与显示,2002,17(5):323-330. |
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| 作者姓名： | 王文 孟志国 郭海成 |
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| 作者单位： | 香港科技大学,电机电子工程系,香港,九龙 |
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| 摘 要： | 低温金属单向诱导横向晶化多晶硅薄膜晶体管技术与常规的固相晶化多晶硅薄膜晶体管相比，制作工艺简单，而且提高了场效应迁移率和漏极击穿电压，降低了漏电电流，改进了器件参数空间分布的均匀性。我们使用金属单向诱导横向晶化多晶硅薄膜晶体管技术，成功地制作了有源矩阵液晶显示器和有源矩阵有机发光二极管显示器。
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| 关 键 词： | 金属单向诱导横向晶化 多晶硅薄膜晶体管 有源平板显示器 有源矩阵液晶显示器 有源矩阵 有机发光二极管 显示器 |
| 文章编号： | 1007-2780(2002)05-0323-08 |
| 修稿时间： | 2002年6月25日 |
High Performance Metal-induced Unilaterally Crystallized Polycrystalline Silicon Thin-film Transistors: Technology and Applications |
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| WANG Wen,MENG Zhi guo,GUO Hai cheng.High Performance Metal-induced Unilaterally Crystallized Polycrystalline Silicon Thin-film Transistors: Technology and Applications[J].Chinese Journal of Liquid Crystals and Displays,2002,17(5):323-330. |
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| Authors: | WANG Wen MENG Zhi guo GUO Hai cheng |
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| Abstract: | Low temperature metal induced unilaterally crystallized polycrystalline silicon thin film transistors (TFTs) have been developed and characterized. These TFTs are better than their solid phase crystallized counterparts in many process and device performance measures, such as shorter and simpler process flow, higher field effect mobility, reduced leakage current, better immunity to early drain breakdown and much improved spatial uniformity of device parameters. They have been used to realize active matrices for liquid crystal and organic light emitting diode flat panel displays. |
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| Keywords: | metal induced laterally crystallization poly Si thin film transistor flat panel displays |
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