首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Reducing vulnerability to soft errors in sub-100 nm content addressable memory circuits
Abstract:We first study the impacts of soft errors on various types of CAM for different feature sizes. After presenting a soft error immune CAM cell, SSB-RCAM, we propose two kinds of reliable CAM, DCF-RCAM and DCK-RCAM.In addition, we present an ignore mechanism to protect dual cell redundancy CAMs against soft errors. Experimental results indicate that the 11T-NOR CAM cell has an advantage in soft error immunity. Based on 11T-NOR, the proposed reliable CAMs reduce the SER by about 81% on average with acceptable overheads. The SER of dual cell redundancy CAMs can also be decreased using the ignore mechanism in specific applications.
Keywords:soft error  content addressable memory  reliability  vulnerability  critical charge
本文献已被 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号