A comparative study of gadolinium gallium garnet growth by femtosecond and nanosecond pulsed laser deposition |
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Authors: | M.S.B. Darby T.C. May-Smith T. Donnelly K.D. Rogers |
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Affiliation: | a Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, United Kingdom b School of Physics, Trinity College Dublin, Dublin 2, Ireland c Department of Materials & Medical Sciences, Cranfield University, Shrivenham, Swindon SN6 8LA, United Kingdom |
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Abstract: | The growth of epitaxial Nd:Gd3Ga5O12 (GGG) on Y3Al5O12 (YAG) by femtosecond pulsed laser deposition is reported. We have used a Ti:sapphire laser at a wavelength of 800 nm and pulse length of 130 fs, operating at a repetition rate of 1 kHz. The film properties have been studied systematically as a function of the deposition parameters of laser fluence, spot-size, oxygen pressure, target-substrate distance and temperature. Scanning electron microscopy, atomic force microscopy and X-ray diffractometry were used to characterise the surface structure and crystallinity of the films. X-ray diffraction analysis shows that epitaxial growth has occurred. A comparison between the ion velocities produced by nanosecond and femtosecond laser ablation of the GGG target material has been investigated by the Langmuir probe technique. The results indicate a large difference in the plasma characteristics between femtosecond and nanosecond ablation, with ion velocities up to eight times faster observed in the femtosecond case. |
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Keywords: | 68.55.jk 81.15.-z 77.55.+f 52.27.Cm |
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