Effect of a biasing electric field on the propagation of antisymmetric Lamb waves in piezoelectric plates |
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| Affiliation: | 1. Department of Engineering Mechanics, Shanghai Jiaotong University, Shanghai 200240, China;2. Department of Engineering Mechanics, Xi''an Jiaotong University, Xi''an 710049, China;1. Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People''s Republic of China;2. Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People''s Republic of China;3. State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People''s Republic of China;4. College of Electronic and information Engineering, Hebei University, Baoding 071002, People''s Republic of China;1. Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, China;2. Department of Applied Physics, Donghua University, Shanghai 201620, China |
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| Abstract: | Based on the theories of anisotropic elasticity, piezoelectricity and elastic waves in solids, the propagation of antisymmetric Lamb waves in a biasing electric field is investigated in this paper. By solving the coupled differential equations of motion under a biasing electric field, the phase velocity equations of antisymmetric Lamb wave modes for electrically open and shorted cases are obtained, respectively. The beating effect arising from the difference between the phase velocity of the zero-order symmetric mode and antisymmetric mode exists in the plate when the plate has a thickness comparable to or slightly larger than the wavelength. The influence of the biasing electric field on the phase velocity, beat wavelength, mechanical displacement and stress fields for the lowest two antisymmetric modes of Lamb waves are discussed in detail. From the calculated results, it is seen that the phase velocity of the fundamental antisymmetric mode is especially sensitive to the applied biasing electric field. |
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