Preferred orientation of ZnO nanoparticles formed by post-thermal annealing zinc implanted silica |
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| Institution: | 1. Open Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130021, People''s Republic of China;2. The Institute of Theoretical Physics, Northeast Normal University, Changchun 130024, People''s Republic of China;3. Chemical Physics Laboratory, Department of Physics, Fisk University, Nashville, TN 37208, USA;1. School of Advanced Materials Engineering and Research Center of Advanced Materials Development and Semiconductor Physics Research Center, Chonbuk National University, Chonju, 561-756, Republic of Korea;2. IT Materials and Components Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 305-700, Republic of Korea;3. Technology Innovation Support Team, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 305-600, Republic of Korea;1. Universidade Estadual Paulista “Júlio de Mesquita Filho” – UNESP, Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, POSMAT, Bauru, SP, Brazil;2. Universidade Federal do Ceará – UFC, Departamento de Física, Fortaleza, CE, Brazil;3. Universidade Estadual Paulista “Júlio de Mesquita Filho” – UNESP, Departamento de Física, Bauru, SP, Brazil;1. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, India;2. Department of Physics and Astronomy, Indian Institute of Technology Kharagpur, Kharagpur, India;3. Amity University, Noida 201313, Uttar Pradesh, India;1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;2. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden 01314, Germany;3. School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China;1. Department of Chemistry, M. S. Ramaiah Institute of Technology, Autonomous Institute, Bangalore 560 054. Karnataka, India;2. VTU Research Centre, Department of chemistry, M.S. Ramaiah Institute of Technology, BMS Institute of Technology, Bangalore, India;1. Institute of Nuclear Engineering and Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC;2. Quantum Beam Unit, National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan;3. Nuclear Science and Technology Development Center, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC;4. Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC |
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| Abstract: | High quality zinc oxide nanoparticles with (002) preferred orientation were prepared by post-thermal annealing zinc implanted silica at 700 °C using two methods. One method was annealing zinc implanted silica at 700 °C for 2 h in oxygen ambient; the other method was sequentially annealing zinc implanted silica at 700 °C in nitrogen and oxygen ambient for 1 h, respectively. X-ray diffraction (XRD), absorption and microphotoluminescence (micro-PL) results indicated that the latter method could create high quality ZnO nanoparticles with (002) preferred orientation and narrow size-distribution. X-ray photoelectron spectra (XPS) showed the formation of ZnO nanoparticles on a silica surface, where the ZnO nanoparticle content increased with increasing oxidation time in an oxygen environment. The processes of the transformation from Zn to ZnO are discussed. |
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