DSA-type anode based on conductive porous p-silicon substrate |
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| Institution: | 1. Applied Mechanics Laboratory, Department of Engineering Mechanics, Center for Nano and Micro Mechanics, Center for Advanced Mechanics and Materials, Tsinghua University, Beijing 100084, China;2. School of Engineering, Brown University, Providence, RI 02912, USA;1. Dipartimento di Scienze Chimiche e Farmaceutiche, Università degli Studi di Ferrara, via Fossato di Mortara 17, 44121 Ferrara, Italy;2. Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca'' Foscari Venezia, Via Torino 155/B, 30170 Mestre— VE, Italy |
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| Abstract: | Porous silicon (PS) thin films have been prepared by electrochemical anodization of p-Si in HF–H2O–EtOH solution and they have been used as substrate material for the preparation of iridium oxide based electrodes (PS/IrO2) using the thermal decomposition technique. The morphology and the electrochemical behaviour of the PS/IrO2 have been studied and the results have been compared with IrO2 electrodes deposited on a sandblasted p-silicon (p-Si/IrO2). SEM analyses have revealed that the PS/IrO2 electrodes are porous, rough and IrO2 appears to be deposited within some silicon pores, while the p-Si/IrO2 present a ‘mud-cracked’ surface. Cyclic voltammetries in 1 M HClO4 have shown that the PS/IrO2 presents higher surface area than p-Si/IrO2. |
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