Ion beam as a probe to study the behavior of hydrogen on silicon surfaces |
| |
| Affiliation: | 1. Institute of Atomic and Molecular Physics, Sichuan University, Chengdu, Sichuan 610065, People''s Republic of China;2. Department of Physics, Taiyuan Normal University, Taiyuan, Shanxi 030031, People''s Republic of China;1. Graduate School of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu 182-8585, Japan;2. Center for International Programs and Exchange, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu 182-8585, Japan;1. Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg, Russian Federation;2. Ural Federal University, 620002 Ekaterinburg, Russian Federation |
| |
| Abstract: | Hydrogen adsorption and its behavior on Si surfaces is studied by ion beam techniques in the energy range of MeV–keV. Elastic recoil detection analysis employing MeV ion beams is one of the most reliable experimental techniques for direct determination of absolute hydrogen coverages on Si surfaces. Results of its application to Si(1 0 0) and Si(1 1 1) clean surfaces are described. Important new results of the role of adsorbed hydrogen on the growth process or structures of metallic thin films on Si(1 1 1) surfaces also are described. Characterization of the growth process or structure of the thin films, as well as the characterization of hydrogen, is performed by ion beam techniques. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
