Stabilization of porous silicon surface by low temperature photoassisted reaction with acetylene |
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| Institution: | 1. Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN, 47907, USA;2. School of Material Engineering, Purdue University, West Lafayette, IN, 47907, USA;1. Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, PR China;2. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, PR China;3. Shenzhen Engineering Laboratory for Advanced Technology Ceramics, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, PR China;4. Guangdong JANUS Intelligent Group Corporation Limited, Dongguan, 523878, PR China;5. GuoGuang Electric Company Ltd, No. 8 Jinghu Road, Xinhua Town, Huadu Region, Guangzhou, 510800, PR China;1. Laboratory of Fiber modification and Functional Fiber, College of Materials Science and Engineering, Tianjin Polytechnic University, Tianjin 300387, PR China;2. China Blue Chemical Ltd., Beijing 100029, PR China;1. NIMBE, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif sur Yvette, France;2. CEA, LITEN, 17 rue des Martyrs, 38054 Grenoble, France;3. Univ. Grenoble Alpes, 38000 Grenoble, France;4. ICMMO (UMR CNRS 8182), Université Paris Sud/Université Paris-Saclay, 15 Avenue Georges Clemenceau, 91405 Orsay Cedex, France;1. School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003, PR China;2. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren''ai Road, Suzhou 215123, Jiangsu, PR China;3. School of Energy and Power, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu 212003, PR China |
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| Abstract: | A hybrid approach of forming a stabilizing layer of bonded carbon on porous silicon (PSi) surface by photoassisted reaction of acetylene gas at low temperatures is described. The PSi samples were made by anodization in a HF/H2O2 electrolyte at a current density of 80 mA/cm2. Samples show a strong luminescence with a peak at 644±4 nm. The photoluminescence (PL) intensity shows a very strong quenching under the influence of continuous laser illumination (～0.25 W/cm2, 488 nm). The PSi samples were subjected to flowing acetylene under optical illumination from quartz halogen lamp (20 mW/cm2). The PL intensity is initially quenched to very low values (less than 5% of initial value) and then recovers on further exposure to acetylene to a final value ～30% of the initial value. No quenching is observed on further exposure to laser illumination in ambient air instead an improvement of 15–25% in PL intensity is observed. This behaviour is a good indicator of the formation of a practically stable PSi surface. |
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