| Institution: | 1. School of Physics and Microelectronics, Shandong University, Jinan 250100, People''s Republic of China;2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People''s Republic of China;3. Physics Department, Shandong Normal University, Jinan 250100, People''s Republic of China;1. Centro de Estudios en Semiconductores (C.E.S.), Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela;2. Laboratorio de Cristalografía, Departamento de Química, Universidad de Los Andes, Mérida 5101, Venezuela;1. Pprime Institute, Department of Physics and Mechanics of Materials, University of Poitiers/CNRS/ENSMA, France;2. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia;3. Novosibirsk State University, 630090, Novosibirsk, Russia;1. Department of Materials Science and Engineering, Kyoto University, Kyoto 606-8501, Japan;2. Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan;3. Department of Materials Science and Engineering, University of Utah, Salt Lake City 84112-9206, USA;4. Department of Applied Physics and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192, Japan |
