Transport properties and mangetoresistance of (RE,Sr)2NiO4 (RE=Pr,Nd, Sm and Eu) |
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| Affiliation: | 1. State Key Laboratory of Material Processing and Die & Mould Technology, Laboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China;2. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Opto-electronic Technology, Dalian University of Technology, Dalian 116024, PR China;1. Department of Physics, College of Humanities and Sciences, Nihon University, 3-8-1 Sakurajousui, Setagaya-ku, Tokyo 156-8550, Japan;2. Department of Integrated Sciences in Physics and Biology, College of Humanities and Sciences, Nihon University, 3-8-1 Sakurajousui, Setagaya-ku, Tokyo 156-8550, Japan;3. Institute of Multidisciplinary Research for Advance Materials, Tohoku University, Sendai 980-8577, Japan;1. Department Polymer Engineering, Faculty of Technology, Düzce University, Düzce, Turkey;2. Department of Composite Material Technologies, Graduate School of Natural and Applied Sciences, Düzce University, Düzce, Turkey |
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| Abstract: | We report on the crystal growth and the measurements of resistivity, magnetoresistance and photoemission spectroscopy of (RE,Sr)2NiO4 in the heavily Sr-doped region. Although the in-plane resistivity of the heavily Sr-doped crystals was rather small at room temperature, it increased for several orders of magnitude with decreasing temperature. A large negative magnetoresistance was observed for NdSrNiO4 at low temperature, while only small magnetoresistance was observed for the single crystals of RE=Pr, Sm and Eu. Photoemission spectroscopy measurements revealed a significant influence of the RE 4f states to the electronic structure at relatively low binding energies in PrSrNiO4 and NdSrNiO4. |
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