首页 | 本学科首页   官方微博 | 高级检索  
     检索      

宽束冷阴极和部端霍尔离子源对薄膜透过率和应力影响的比较
引用本文:刘文军,弥谦,秦君君,方勇,杨利红.宽束冷阴极和部端霍尔离子源对薄膜透过率和应力影响的比较[J].应用光学,2005,26(2):51-53.
作者姓名:刘文军  弥谦  秦君君  方勇  杨利红
作者单位:1. 西安工业学院,陕西,西安,710032
2. 中国科学院,西安光学精密机械研究所,陕西,西安,710068
摘    要:在宽束冷阴极离子源和端部霍尔离子源辅助沉积情况下,利用南光ZZS700 1/G箱式镀膜机,通过实验分别验证了这两种离子束辅助沉积对光学膜层透过率和应力的影响。通过对大量实验数据进行分析,得出利用低能量和大电流离子束辅助沉积光学薄膜时,膜层性能优于高能量离子束辅助沉积膜层。分析了膜层特性改变的原因,并提出了合理的工艺参数。实验结果表明,低能量、大电流的离子束辅助沉积使光学薄膜的性能更佳。

关 键 词:宽束冷阴极离子源  端部霍尔离子源  离子束辅助沉积  光学薄膜
文章编号:1002-2082(2005)02-0051-03
收稿时间:2004-04-09

Influence of Broad Beam Cold Cathode and End Hall Ion Sources on Transmissivity and Stress
LIU Wen-jun,MI Qian,QIN Jun-jun,FANG Yong,YANG Li-hong.Influence of Broad Beam Cold Cathode and End Hall Ion Sources on Transmissivity and Stress[J].Journal of Applied Optics,2005,26(2):51-53.
Authors:LIU Wen-jun  MI Qian  QIN Jun-jun  FANG Yong  YANG Li-hong
Institution:1.Xi'an Institute of Technology, Xi'an 710032, China; 2.Xi'an Institute
of Optics and Precision Mechanics of Chinese Academy of Sciences, Xi'an 710068, China
Abstract:Under the conditions of ion beam-assisted deposition (IBAD) using broad beam cold cathode and end Hall ion sources, utilizing the box type of Nanguang ZZS700-1/G coater,the influences of two IBADs on transmissivity and stress have been demonstrated respectively.With the analyses of a great deal of experimental datas, the properties of the optical thin-film got by IBAD with low energy and high current are better than that got by high energy IBAD. The reasons of the property variation of flim layers is analyzed and the processing parameters are given in this paper. The experiments show that IBAD with low energy and high current makes the layer properties much better.
Keywords:broad beam cold cathode ion source  end Hall ion source  IBAD  optical thin-film
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《应用光学》浏览原始摘要信息
点击此处可从《应用光学》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号