Statistical considerations on electronic behavior of the gap states in amorphous semiconductors

The equilibrium distribution functions of the gap states taking into account the effective intrasite electronic correlation energy have been employed to discuss the electronic behaviors of amorphous semiconductors, especially to interpret the temperature dependence of dc and ac conductivity and also the effect of foreign impurity atoms on the conductivity in chalcogenide glasses. The dc conductivity of thermal activation type has been explained without assuming a negligible density of states near the Fermi level, and the gradual decrease in activation energy of conductivity with increasing impurity concentration, even in melt-quenched chalcogenide glasses, has been deduced.