Determination of size and concentration of critical clusters of silicon carbide in the vapour phase in homogeneous nucleation process |
| |
Authors: | SK Lilov YuM Tairov VF Tsvetkov |
| |
Institution: | Department of Semiconductors, Faculty of Physics, University of Sofia, Sofia 1126, Bulgaria;Department of Dielectrics and Semiconductors, Leningrad Electrical Engineering Institute, Leningrad 197022, U.S.S.R. |
| |
Abstract: | The concentrations of clusters of various size in the atmosphere during silicon carbide crystal growth have been calculated on the basis of fundamental ideas of homogeneous nucleation theory, taking into account the specific parameters of silicon carbide. It has been shown that the cluster concentration are sufficiently high to conclude that this is the dominant influence during the initial stages of crystal growth. In this way the assumption of the polymer theory of polytypism, namely that the polytype properties of silicon carbide can be determined from the composition of the gas phase, containing sufficiently large clusters with various polytype structures, has been confirmed. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|