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Recombination of silicon ions by electron capture from atomic hydrogen and helium
Authors:M. C. Bacchus-Montabonel
Affiliation:(1) Laboratoire de Spectrométrie Ionique et Moléculaire (UMR 5579), CNRS et Université Lyon I, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France, FR
Abstract: Ab initio potential-energy curves and coupling matrix elements of the Σ and Π molecular states involved in the collision of the Si2+, Si3+ and Si4+ multicharged ions on atomic hydrogen and helium have been determined by means of configuration interaction methods. The total and partial electron capture cross sections have been determined using a semiclassical or a quantal approach in the 0.002–0.1 au velocity range. A detailed comparison with very recent theoretical and experimental rate coefficient results is made. Received: 14 September 1999 / Accepted: 3 February 2000 / Published online: 2 May 2000
Keywords::   Electron capture  Silicon ions
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