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Vertical-cavity Surface-emitting Lasers Fabricated Twice by Implantation Using TungstenWireasMaskandZincDiffusion
作者姓名:JIANG Xiuying  DU Guotong  LIU Suping  ZHAO Fanghai  LIU Ying
作者单位:Department of Electronic Engineering and National Integrated Optoelectronic Joint Laboratory,Jilin University,Changchun 130023,China
摘    要:Vertical-cavitySurface-emittingLasersFabricatedTwicebyImplantationUsingTungstenWireasMaskandZincDiffusion¥JIANGXiuying;DUGuot...

收稿时间:1993/9/6

Vertical-cavity Surface-emitting Lasers Fabricated Twice by Implantation Using Tungsten Wire as Mask and Zinc Diffusion
JIANG Xiuying, DU Guotong, LIU Suping, ZHAO Fanghai,LIU Ying.Vertical-cavity Surface-emitting Lasers Fabricated Twice by Implantation Using Tungsten Wire as Mask and Zinc Diffusion[J].中国激光(英文版),1994,3(1):1-4.
Authors:JIANG Xiuying  DU Guotong  LIU Suping  ZHAO Fanghai  LIU Ying
Abstract:We have designed a novel vertical-cavity surface emitting laser. The epituxiallayer structure grown by molecular beam epitaxy (MBE) contains the p-doped distributed Bragg reflector (DBR) top mirror, the n-doped DBR bottom mirror and GaAs active region. The structure is obtained by twice deep H+ implantutions which use the crossed tungsten wire as an implantetion mask and by zinc diffusion. The lasing wavelength is about 890nm and the thresholdcurrents are 500~700 mA under room-temperature pulsed conditions.
Keywords:vertical-cavity  surface-emitting laser
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