Nature of the effect of an increase in the charge-carrier lifetime for irradiatedn-Si

An increase and stabilization of the charge-carrier lifetime in compensated n-Si exposed to radiation is discussed. A mechanism is suggested which explains this effect based on concepts of the increase of potential fluctuation barriers upon exposure to radiation. Tashkent State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 3–6, July, 2000.