Influence of x irradiation on internal friction in silicon |
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| Authors: | N P Kulish P A Maksimyuk N A Mel’nikova A P Onanko A M Strutinskii |
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| Institution: | (1) T. Shevchenko State University, 252022 Kiev, Ukraine |
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| Abstract: | An investigation was made of the influence of γ irradiation on the temperature dependences of internal friction in disk-shaped silicon substrates in the kilohertz frequency
range. After exposure to doses of 104 and 105 R, two dominant internal friction peaks were observed at ∼330 and ∼450 K with activation energies H
1=0.6 eV and H
2=0.9 eV, respectively. These peaks were evidently caused by reorientation of interstitial silicon atoms in dumbbell configurations.
Fiz. Tverd. Tela (St. Petersburg) 40, 1257–1258 (July 1998) |
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