| Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction |
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| 引用本文： | 陆红霞,董正超,付 浩. Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction[J]. 中国物理 B, 2008, 17(2): 680-684 |
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| 作者姓名： | 陆红霞 董正超 付 浩 |
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| 作者单位： | Department of Physics, Huaiyin Teacher College, Huaiyin 223001, China;Department of Physics, Huaiyin Teacher College, Huaiyin 223001, China;Department of Physics, Huaiyin Teacher College, Huaiyin 223001, China |
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| 基金项目： | Projectsupported by the Program for Excellent Talents in HuaiyinTeachers College. |
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| 摘 要： | Recently experiments and theories show that the tunnel magnetoresistance （TMR） does not only depend on the ferromagnetic metal electrodes but also on the insulator. Considering the rough-scattering effect and spin-flip effect in the insulator, this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet （FM/I/FM） tunnelling junction by using Slonczewsik＇s model. A more general expression of TMR ratio as a function of barrier height, interface roughness and spin-flip effect is obtained. In lower barrier case, it shows that the TMR ratio depends on the roughscattering effect and spin-flip effect.
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| 关 键 词： | 磁致电阻 自旋翻转效应 粗糙面反射 电磁学 |
| 收稿时间： | 2007-05-07 |
| 修稿时间： | 2007-07-23 |
Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction |
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| Lu Hong-Xi,Dong Zheng-Chao and Fu Hao. Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction[J]. Chinese Physics B, 2008, 17(2): 680-684 |
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| Authors: | Lu Hong-Xi Dong Zheng-Chao Fu Hao |
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| Affiliation: | Department of Physics, Huaiyin Teacher College, Huaiyin 223001, China |
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| Abstract: | Recently experiments and theories show that the tunnelmagnetoresistance (TMR) does not only depend on the ferromagneticmetal electrodes but also on the insulator. Considering therough-scattering effect and spin-flip effect in the insulator, thispaper investigates the TMR ratio in aferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction byusing Slonczewsik's model. A more general expression of TMR ratio asa function of barrier height, interface roughness and spin-flipeffect is obtained. In lower barrier case, it shows that the TMRratio depends on the rough-scattering effect and spin-flip effect. |
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| Keywords: | magnetoresistance spin-flipeffect rough-scattering |
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