| High-performance InAs/GaAs quantum dot laser with dot layers grown at 425℃ |
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| 引用本文： | 岳丽,龚谦,曹春芳,严进一,汪洋,成若海,李世国.High-performance InAs/GaAs quantum dot laser with dot layers grown at 425℃[J].Chinese Optics Letters,2013(6):39-42. |
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| 作者姓名： | 岳丽 龚谦 曹春芳 严进一 汪洋 成若海 李世国 |
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| 作者单位： | Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences;Department of Electronic Communication and Technology,Shenzhen Institute of Information Technology |
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| 基金项目： | This work was supported by the National Natu- ral Foundation of China （Nos. 61021064, 61176065, 10990103, and 61204058） and the National Basic Re- search Program of China （No. 2011CB921201）. |
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| 摘 要： | We investigate InAs/GaAs quantum dot(QD) lasers grown by gas source molecular beam epitaxy with different growth temperatures for InAs dot layers.The same laser structures are grown,but the growth temperatures of InAs dot layers are set as 425 and 500 ℃,respectively.Ridge waveguide laser diodes are fabricated,and the characteristics of the QD lasers are systematically studied.The laser diodes with QDs grown at 425℃ show better performance,such as threshold current density,output power,internal quantum efficiency,and characteristic temperature,than those with QDs grown at 500 C.This finding is ascribed to the higher QD density and more uniform size distribution of QDs achieved at 425℃.
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| 关 键 词： | 量子点激光器 生长温度 InAs GaAs 性能 阈值电流密度 分子束外延生长 激光二极管 |
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