Metal atom catalyzed oxidation of silicon |
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| Affiliation: | 1. Department of Environmental Science and Engineering, School of Energy and Environmental Engineering, University of Science and Technology Beijing, Beijing 100083, China;2. State Environmental Protection Key Laboratory of Food Chain Pollution Control, Beijing Technology and Business University, Beijing 100048, China;3. Beijing Key Laboratory of Resource-oriented Treatment of Industrial Pollutants, Beijing 100083, China;1. Department of Physics, University Federal of Paraná, mailbox 19091, Curitiba, Paraná 81531-990, Brazil;2. Institute of Physics, University of Sao Paulo, CP 66318, CEP 05315-970, São Paulo, Brazil;3. Department of Chemistry, University Federal of Minas Gerais, Belo Horizonte, Minas Gerais, Brazil;4. University Federal of São Carlos, São Carlos, São Paulo, Brazil;5. Escuela de Ciencia y Tecnología, Universidad Nacional de San Martín (UNSAM), Campus Miguelete, 25 de Mayo y Francia, San Martín, Provincia de Buenos Aires 1650, Argentina;6. Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas (INIFTA, National University of La Plata (UNLP) and CONICET, CC/16 suc. 4, La Plata 1900, Argentina;7. Department of Mechanical Engineering, University Federal of Paraná, Curitiba, Paraná, Brazil |
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| Abstract: | The kinetics of oxygen adsorption/oxidation of Co(poly), CoSi(100) and Si(111) has been measured using UPS and AES techniques. At CoSi oxygen adsorption proceeds via dissociative sticking at Co and oxygen bonding to Si, i.e. the metallic component at the silicide acts as a catalyst. Blocking the metal with molecular CO prevents this catalytic action. Even if the surface is saturated with oxygen, with the thickness of the oxidised layer being ∼15 Å, Co metal is still present in the topmost layer. The unability of the metallic component at the CoSi surface to establish metal-oxygen bonds is explained by a structural effect. |
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