Progress in instrumentation,data reduction,and depth profiles in Auger electron spectroscopy |
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| Affiliation: | 1. Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA 61801;2. Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, USA 61801;1. Leypunsky Institute for Physics and Power Engineering, Obninsk, Russia, 249033;2. Institute of Microelectronics Technology and High Purity Materials RAS, Chernogolovka, Russia, 142432;1. Nanotech Unit, Laboratorio de Materiales y Superficies, Departamento de Ingeniería Química, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga, Spain;2. The Nanotech Unit, Depto. de Física Aplicada I, Andalucía Tech, Universidad de Málaga, Campus de Teatinos s/n, 29071 Málaga Spain;3. Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda. Complutense 30, 28040 Madrid Spain;1. University of Newcastle, School of Mathematical and Physical Sciences, Callaghan 2308, Australia;2. MassThink LLC, Naperville, IL 60565, USA;3. Department of Chemistry, University of Illinois at Chicago, Chicago, IL 60607, USA;4. Argonne National Laboratory, Materials Science Division, 9700 S. Cass Ave, Argonne, IL 60439, USA |
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| Abstract: | Progress in the use of Auger electron spectroscopy is discussed. Specifically limits to spatial resolution in the scanning Auger microprobe resulting from backscattered electrons is illustrated. Determination of chemical state by peak shapes and energies are discussed along with the use of correction factors in quantitating Auger electron data. Finally, the use of inverse Laplace transforms of angle-resolved electron spectroscopy data to generate composition depth profiles of sputtered GaAs is illustrated. It is concluded that Gibbsian surface segregation during sputtering caused depletion of As near the surface of GaAs. |
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