Indium selenide thin film preparation by sol–gel technique

Preparation and characterization of In–Se compound thin films prepared by sol–gel methods on glass substrate have been studied. X-ray diffraction analyses and optical transmission spectrum of In–Se compound thin film samples show that the fabricated sol–gel In–Se thin films features formed mainly as an In₂Se₃ crystal structure. From transmission spectra of In–Se thin films band gap energy were estimated approximately as ∼1.24 eV.