LDMOS in SOI technology with very-thin silicon film |
| |
| Authors: | M Bawedin C Renaux D Flandre |
| |
| Institution: | Microelectronics Laboratory, Université catholique de Louvain (UCL), Place du Levant 3, B-1348 Louvain-La-Neuve, Belgium |
| |
| Abstract: | In this paper, we extensively investigate, by two-dimensional simulations, the output characteristics accuracy and breakdown voltage performance for very-thin film (80 nm) SOI lateral double-diffused MOS (LDMOS) transistor as a function of the drift doping, drift length and field plate length. Trade-offs are discussed to optimize the off-state breakdown voltage versus the occurrence of kink effect and quasi-saturation in on-state. The conclusions are supported by experimental results. |
| |
| Keywords: | Kink effect Quasi-saturation Lateral double-diffused MOS transistor Very-thin silicon film Silicon-on-insulator |
| 本文献已被 ScienceDirect 等数据库收录！ |
