Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods |
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Authors: | NIE Chao ZHANG Rong XIE Zi-Li XIU Xiang-Qiang LIU Bin FU De-Yi LIU Qi-Jia HAN Ping GU Shu-Lin SHI Yi ZHENG You-Dou |
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Affiliation: | Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093 |
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Abstract: | One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition (CVD) method on natural cleavage plane (110) of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite (w-InN), zincblende structure (z-InN) is only reported for 2D InN crystals before.However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich--Schwoebel barrier. |
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Keywords: | 61.46.Km 62.23.Hj 81.07.Vb |
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