The origin of inter-dimer-row correlated adsorption for NH3 on Si(0 0 1) |
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| Authors: | JHG Owen DR Bowler |
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| Institution: | aDepartment of Condensed Matter Physics, University of Geneva, 24 Quai E.-Ansermet, CH-1211 Geneva 4, Switzerland;bMaterials Simulation Laboratory, UCL, Gower St., London WC1E 6BT, UK;cLondon Centre for Nanotechnology, UCL, Gordon St., London WC1H 0AH, UK;dDept. of Physics and Astronomy, UCL, Gower St., London WC1E 6BT, UK |
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| Abstract: | We discuss the interaction between adsorbing ammonia molecules and pre-adsorbed ammonia fragments on the Si(0 0 1) surface, searching for experimental evidence of a H-bonded precursor state predicted by modelling. While correlations along dimer rows have already been identified, these mix substrate-mediated effects due to dimer buckling with ammonia–adsorbate effects. Correlations between fragments on neighbouring dimer rows are not affected by substrate effects (in this system), allowing an analysis of direct ammonia–adsorbate effects. We present an analysis of cross-row correlations in existing high-coverage STM data which shows significant correlations between NH2 groups on neighbouring dimer rows over a significant range, providing evidence for the H-bonded precursor state with a range of around 10 Å. We discuss implications for the interpretation of STM images of ammonia on Si(0 0 1). |
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| Keywords: | Scanning tunneling microscopy Surface chemical reaction Ammonia |
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