| CW CO2激光退火在硅中产生的氧沾污 |
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| 引用本文： | 许振嘉,陈维德.CW CO2激光退火在硅中产生的氧沾污[J].物理学报,1984,33(1):9-15. |
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| 作者姓名： | 许振嘉 陈维德 |
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| 作者单位： | 中国科学院半导体研究所 |
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| 摘 要： | 利用相衬显微术、电子吸收像、IR光谱、AES和ESCA谱研究了硅片经CW CO2激光退火后的一些特征,其中着重分析氧的深度沾污问题。电子吸收像表明:我们的CW CO2激光退火条件下,其效果并不很均匀。实验还证明:空气中的CW CO2激光退火可以减少样品表面的碳沾污,但产生氧沾污。氧的沾污分两部分:表面是SiOx,其下是自由氧原子,厚度不大于250?。
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| 收稿时间： | 1982-09-13 |
IN-DEPTH OXYGEN CONTAMINATION PRODUCED IN CW CO2 LASER ANNEALED Si |
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| XU ZHEN-JIA and CHEN WEI-DE.IN-DEPTH OXYGEN CONTAMINATION PRODUCED IN CW CO2 LASER ANNEALED Si[J].Acta Physica Sinica,1984,33(1):9-15. |
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| Authors: | XU ZHEN-JIA and CHEN WEI-DE |
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| Abstract: | Siwafers annealed by CW-CO2 laser have been studied using Nomarski technique, electron absorption image, IR spectrum, AES and ESCA, with particular emphasis on the study of in-depth oxygen contamination. Electron absorption image shows that the effect of CW-CO2 laser annealing is not very uniform in our case. And it has also shown that CW-CO2 laser annealing in air would decrease the carbon contamination on the Si surface, but produce oxygen contamination. This oxygen contamination consists of two parts: SiOx on the surface and free oxygen atom underneath, its thickness is less than～250?.
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