GaInAsP/InP阶梯量子阱中电子-电子的散射率

在有效质量近似下,利用打靶法和费米黄金定则计算出GaxIn1-xAsyP1-y/In P阶梯量子阱中两个及多个电子从第一激发态子带到基态子带的散射率及平均散射率。计算结果表明,电子-电子的散射率和平均散射率随Ga组分和阱宽的增大而升高,随As组分的增大而降低。散射率随电子初态能和外加电场强度的增大而降低,平均散射率随载流子浓度的增大而升高。电子温度对平均散射率的影响不明显,平均散射率随着电子温度的升高而稍微降低。

Electron-electron Scattering Rate in GaInAsP/InP Stepped Quantum Well

Within the framework of effective mass approximation, the scattering rate and the mean scattering rate for two electrons and multiple electrons initially in the first excited subband and finally in the ground subband in GaxIn1-xAsyP1-y/InP stepped quantum well were calculated adopting the shooting method and Fermi’s golden rule. The results show that the electron-electron scattering rate and the mean scattering rate increase with the increasing of Ga composition and well width, decrease with the increasing of As composition. The scattering rate decreases with the increasing of initial electron energy and intensity of applied electric field. The mean scattering rate increases with the increasing of carrier density. The electron temperature does not have great influence on the mean scattering rate, the mean scattering rate decreases slightly as the electron temperature rises. The cal-culated results can provide theory basis and guiding significance for the design of optoelectronic de-vices based on stepped quantum well and GaInAsP/InP material.