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氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响
引用本文:李旺,唐鹿,杜江萍,薛飞,辛增念,罗哲,刘石勇. 氢退火对LPCVD生长的ZnO薄膜光学和电学性能的影响[J]. 发光学报, 2016, 37(12): 1496-1501. DOI: 10.3788/fgxb20163712.1496
作者姓名:李旺  唐鹿  杜江萍  薛飞  辛增念  罗哲  刘石勇
作者单位:1. 江西科技学院 协同创新中心, 江西 南昌 330098;2. 江西科技学院 管理学院, 江西 南昌 330098;3. 浙江正泰太阳能科技有限公司, 浙江 杭州 310053
基金项目:江西科技学院博士科研启动基金;“863”国家高技术发展计划(2012AA052401);国家自然科学基金(21571095)
摘    要:采用低压化学气相沉积(LPCVD)在玻璃衬底上制备了B掺杂ZnO(BZO)薄膜,研究了氢气气氛退火对BZO薄膜光学性能和电学性能的影响。结果表明:在氢气气氛下退火后,BZO薄膜的物相结构和透光率基本无变化,但BZO薄膜的导电能力却明显提高。Hall测试结果表明:在氢气下退火时载流子浓度基本保持不变,但迁移率却明显提高。实验结果可为进一步提高BZO薄膜的光学电学综合性能提供借鉴。

关 键 词:低压化学气相沉积  ZnO薄膜  光学性能  载流子浓度  霍尔迁移率
收稿时间:2016-06-17

Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD
LI Wang,TANG Lu,DU Jiang-ping,XUE Fei,XIN Zeng-nian,LUO Zhe,LIU Shi-yong. Effect of Hydrogen Annealing on The Optical and Electrical Properties of ZnO Thin Films Grown by LPCVD[J]. Chinese Journal of Luminescence, 2016, 37(12): 1496-1501. DOI: 10.3788/fgxb20163712.1496
Authors:LI Wang  TANG Lu  DU Jiang-ping  XUE Fei  XIN Zeng-nian  LUO Zhe  LIU Shi-yong
Affiliation:1. Center of Collaboration and Innovation, Jiangxi University of Technology, Nanchang 330098, China;2. Institute of Business Administration, Jiangxi University of Technology, Nanchang 330098, China;3. Chint Solar(Zhejiang) Co. Ltd., Hangzhou 310053, China
Abstract:B doped ZnO ( BZO) films were prepared on glass substrate by LPCVD method. The effect of hydrogen atmosphere annealing on the optical and electrical properties of BZO thin films was studied. The results show that the phase structure and the transmittance of the BZO films have no change after annealing in the hydrogen atmosphere, but the electrical conductivity of the BZO films is obviously improved. The Hall test results reveal that the carrier concentration is almost the same after hydrogen annealing, but the mobility is dramatically increased. The results in this paper should provide a reference for further improving the optical and electrical properties of BZO thin films.
Keywords:low pressure chemical vapor deposition  ZnO thin film  optical properties  carrier concentration  Hall mobility
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