Morphological changes in porous silicon nanostructures: non-conventional photoluminescence shifts and correlation with optical absorption

In this paper, we show that the photoluminescence (PL) shifts of p-type porous silicon (PS) are mainly attributed to some morphological changes related to anodisation conditions. We discuss how differences in the stirring and nature of the electrolytic solution can lead to morphological changes of the PS layers. It has been found that when PS is formed in pure aqueous HF solution, it can exhibit a non-conventional and reproducible “porosity – PL peak relationship”. By correlating the PL spectral behaviour and PS morphology throughout a quantum-confinement model, we explain both conventional and non-conventional PL shifts. Correlation of PL and optical absorption (OA) shows that the PL peak energy and the optical absorption edge of PS exhibit the same trend with size effect. The spectral behaviour of OA with regard to that of PL is well analysed within the quantum-confinement model throughout the sizes and shapes of the nanocrystallites forming PS. The value of the effective band gap energy determined from the calculated lowest PL energy almost corresponds to that estimated from the optical absorption coefficient. These results suggest that the lowest radiative transition between the valence band and the conduction band corresponds to the largest luminescent wires, and that the radiative recombination process leading to the PL emission occurs in the c-Si crystallite core.