Scanning tunneling microscopy of the nonequilibrium interaction of impurity states at semiconductor surfaces |
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Authors: | P I Arseev N S Maslova S I Oreshkin V I Panov S V Savinov |
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Institution: | (1) Moscow State University, Vorob’evy gory, Moscow, 119899, Russia |
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Abstract: | Interaction of two localized impurity states of Si atoms at a GaAs surface was studied by scanning tunneling microscopy and spectroscopy. The effects of a twofold “switching” on and off of the states of each of the interacting atoms, the tunneling-interaction-induced mutual level pulling of these states, and the level stabilization near E F were observed. These effects are explained in terms of the extended Anderson model. |
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