Electronic and thermodynamic properties of B2-FeSi from first principles |
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Authors: | KaiMei ZhaoGang Jiang Lili Wang |
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Institution: | a Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China b Computer Application Institute of CAEP, Academy of Engineering Physics of China, Mianyang 621900, China |
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Abstract: | The electronic and thermodynamic properties of B2-FeSi have been investigated using the first-principles method based on the plane-wave basis set. The calculated equilibrium lattice constant is in good agreement with available experimental and theoretical data. Our results have shown that B2-FeSi was a narrow gap semiconductor of above 0.055 eV and exhibited metallic characteristics. The density of states (DOS) can also describe orbital mixing. Using the quasi-harmonic Debye model, the thermodynamic properties of B2-FeSi have been analyzed. Variations of the Debye temperature ΘD, thermal expansion α, heat capacity Cv, entropy S and the Grüneisen parameter γ on temperature T and pressure P were obtained successfully in the ranges of 0-2400 K and 0-140 GPa. |
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Keywords: | First principles Electronic properties Thermodynamic properties FeSi |
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