Transport properties of boron-doped single-walled silicon carbide nanotubes |
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Authors: | YT YangRX Ding JX Song |
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Institution: | a Key laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi''an 710071, China b School of Electronic Engineering, Xi’an Shiyou University, Xi’an 710075, China |
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Abstract: | The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green’s function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices. |
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Keywords: | Boron-doped Silicon carbide nanotubes Transport properties Non-equilibrium Green&rsquo s function |
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