Effects of annealing on the electrical properties of HgTe crystals

The carrier mobility of HgTe crystals at 15°C increased to as much as $\text{33,000}\text{cm}{}^2\text{V sec}$, and the transverse magnetoresistance decreased, when the crystals were annealed long enough in mercury vapor. The results are compared with our calculations of the galvanomagnetic effects for mixed scattering by phonons and charged centers, which was made for a parabolic band. It is concluded that the density of charged centers decreases with annealing, and that acoustic phonons may be the dominant scattering sources near room temperature.