Polarizabilities of shallow donors in silicon — A comment |
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Authors: | K. Yoshihiro C. Yamanouchi |
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Affiliation: | Electrotechnical Laboratory, Tanishi, Tokyo 188, Japan |
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Abstract: | A recent experiment on n-type As, P and Sb-doped Si samples to study the donor polarizabilities by the capacitance measurement should be reinterpreted on the basis of the d.c. resistivity data below 4.2 K together with the concentration vs resistivity relations at room temperature. |
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