Evidence for a deep acceptor level in p-InSb from the variation of hole density with uniaxial stress |
| |
| Authors: | H.J. Mackey B.J. Vaughn L.M. Rater D.G. Seiler |
| |
| Affiliation: | North Texas State University, Department of Physics, Denton, Texas 76203, U.S.A. |
| |
| Abstract: | The hole density of Cd doped p-InSb has been studied as a function of uniaxial compressive stress along [001] at T = 77 K. Analysis implies the presence of a deep acceptor level whose activation energy decreases with compressive stress, dEA/dχ = ?3.9 meV/kbar. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
