The defect structure of CdTe: Hall data |
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Authors: | S.S. Chern H.R. Vydyanath F.A. Kro¨ger |
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Affiliation: | Department of Materials Science, University of Southern California, University Park, Los Angeles, California 90007, USA |
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Abstract: | A high-temperature Hall effect study as function of cadmium pressure and temperature was carried out for pure and indium-doped CdTe. The results, combined with published data on the Hall effect of quenched crystals and electronic energy level positions, are interpreted on the basis of a detailed point defect model. Parameters of the equilibrium constants of various defect formation reactions are given. |
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