Electromigration in tin single crystals |
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Authors: | A Khosla HB Huntington |
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Institution: | Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12181, U.S.A. |
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Abstract: | Atom transport in high-purity tin single crystals due to the influence of large direct currents has been measured by the “vacancy flux” technique. Cylindrical specimens were selected with c-axis oriented with 9° perpendicular or parallel to the direction of current flow. Rates of both longitudinal and transverse dimensional changes were used to calculate the anode-directed atom drift velocity. The results gave and , where Z1 is the effective charge number and ?6 = 0.89 and ?⊥ = 0.54 are the estimated correlation factors in the parallel and perpendicular directions. These values for Z1 are appreciably smaller than the results reported earlier for polycrystalline tin by Kuz'memko. The activation energies for agree within experimental error with those of self-diffusion. |
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