Photoluminescence study of native defects in annealed GaAs |
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| Authors: | PK Chatterjee KV Vaidyanathan MS Durschlag BG Streetman |
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| Institution: | Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A. |
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| Abstract: | Low temperature (6°K) photoluminescence measurements have been performed on GaAs annealed under various conditions, to study defects generated by outdiffusion of the constituent atoms. Several defect-related luminescence peaks have been observed and associated with Ga and As outdiffusion. The outdiffusion of these elements during annealing to 850°C in vacuum and with Ga or As overpressure and SiO2 coatings is studied by monitoring the intensities of these peaks. |
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