Density of phonon states in amorphous germanium and silicon |
| |
| Authors: | JY Chen JF Vetelino SS Mitra |
| |
| Institution: | Department of Electrical Engineering, University of Maine at Orono, Orono, Maine 04473, U.S.A.;Department of Electrical Engineering, University of Rhode Island, Kingston, Rhode Island 02881, U.S.A. |
| |
| Abstract: | The density of phonon states in amorphous germanium and silicon is calculated by statistically averaging the crystalline phonon density of states according to the radial distribution function. A simple rigid ion model is used to calculate the density of phonon states at various lattice spacings. The appropriate model parameters are obtained from the pressure dependent elastic constants and the Raman frequency. The calculated results compare favorably to experimental data obtained by infrared and Raman scattering and the results of other theoretical calculations. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
