AC conductivity in amorphous germanium

The ac conductivity in evaporated amorphous germanium films has been measured as a function of annealing and has been found to obey the ω^0.8 law, in accordance with the hopping model. The dc conductivity measurements on the same samples show a $\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$ law behaviour. The densities of localized states near the Fermi level g(E_F), obtained from both experiments are in reasonable agreement with each other. Both the measurements show a reduction by about a factor of 2 in g(E_F) when a freshly prepared film is fully annealed. High-temperature substrate films also show the ω^0.8 behaviour. This suggests that the frequency dependence of the ac conductivity is not caused by voids alone. Other possible explanations of our results are also discussed.