Localized states in amorphous arsenic |
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| Authors: | J Knights |
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| Institution: | Xerox Palo Alto Research Center, Palo Alto, California 94304, U.S.A. |
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| Abstract: | Optical absorption and photoconductivity spectra of bulk amorphous arsenic are presented and analyzed using a general density of states model for amorphous semiconductors. It is concluded that localized states do exist in the forbidden gap and at the band edges and that transitions between localized states are significant. |
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