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Ion-impact chemistry in the system titanium-oxygen (studies on bombardment-enhanced conductivity—III)
Authors:TE Parker  Roger Kelly
Institution:Institute for Materials Research, McMaster University, Hamilton, Canada;FOM-Instituut voor Atoom-en Molecuulfysica, Kruislaan 407, Amsterdam/Wgm., The Netherlands
Abstract:The bombardment of TiO2, whether poly- or single crystalline, with Kr ions leads to an altered surface layer having the following characteristics. It exhibits a high electrical conductivity, has the diffraction pattern of finely polycrystalline Ti2O3, is on the average 110 ± 20 Å thick (for 30 keV Kr), and is indefinitely stable in air at room temperature. The formation of the layer is favored by increasing the target temperature. Formation is half complete at (6 ± 2) × 1016 ions/cm2, hence at a dose substantially greater than that for the half completion of sputter equilibrium (7 ± 2] × 1015 ions/cm2). One model which could lead to Ti2O3 can be excluded fairly readily: this is thermal-spike stimulated vaporization, as the relevant vapor pressures are too low. More satisfactory is a model in which, due to either preferential oxygen sputtering or internal precipitation of oxygen, Ti2O3 nuclei are formed and grow. The reason that the stoichiometry is precisely Ti2O3 can be rationalized by an argument based on surface binding energies (Eb), in the sense that Eb for TiO2 to sputter congruently is 6.4 eV, to yield nuclei of Ti3O5 is 5.7, to yield nuclei of Ti2O3 is 5.1, and to yield TiO is 6.4. A similar rationalization holds also for impact-induced chemical changes observed or inferred with AgBr, CuO, Fe2O3, MoO3, U3O8 and V2O5, except that here thermal-spike stimulated vaporization cannot be excluded.
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