Thermal noise in the linear graded channel junction FET

The limiting noise mechanism in field effect transistors is thermal noise of the conducting channel. An analysis of the thermal noise in a linearly tapered inhomogeneous channel FET is presented leading to a solution for the open circuit noise voltage and the short circuit noise current. Improvement in the open circuit noise voltage for the inhomogeneous FET is shown directly from a comparison with the solution for a homogeneous channel FET.