Native defect changes in cds single crystal platelets induced by vacuum heat treatments at temperatures up to 600°C

Physical properties of selected CdS single crystal platelets as-grown and after vacuum heat treatments at temperatures up to 600°C have been studied using u.v. excited edge emission, mass spectrometry, electrical resistivity and electron paramagnetic resonance (EPR). It was found that sulfur leaves the crystal at temperatures as low as 100°C creating a depletion layer. The native defect changes were monitored by edge emission studies at 4.2°K in combination with etch treatments. The defect structure throughout the crystal is not only dependent upon the temperature and atmosphere of the treatments, but is also strongly dependent upon the cooling rate.