Spatial fluctuations of carrier density in n type GaxIn1−xSb determined by SH-DH effect |
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| Authors: | B Pistoulet JL Robert D Barjon A Raymond A Joullie |
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| Institution: | Centre d''Etudes d''Electronique des Solides, associé au C.N.R.S., Université des Sciences et Techniques du Languedoc, 34060 Montpellier Cedex, France |
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| Abstract: | Variation of carrier concentration through n-type GaxIn1?xSb single crystals, interpreted as due to vacancies behaving as acceptors, is deduced from Shubnikov-de Haas measurements. A quantitative agreement between calculated and experimental values of the mobility at 4.2°K is obtained with this model as well as some information about the influence of growing conditions on the quality of the crystal. |
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