Destruction and appearance of surface metallization in the system K/Si(111) 7×37 |
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Authors: | G V Benemanskaya D V Daineka G É Frank-Kamenetskaya |
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Institution: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) St. Petersburg Technological Institute, 198013 St. Petersburg, Russia |
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Abstract: | Qualitative changes are observed in the character of the surface electronic structure accompanying the adsorption of potassium
on a Si(111) 7×7 surface. The metallic conductivity of the Si(111)7×7 surface is destroyed at the very early stages of adsorption.
A new band induced by the adsorption of potassium is observed below the Fermi level. It is found that the K/Si(111)7×7 interface
is semiconducting right up to saturating coverage. A surface transition from an insulating into a metallic state, accompanied
by pinning of the Fermi level, is observed in the region of saturating coverage. Metallic conductivity arises in the adsorbed
potassium layer as a result of the development of an induced surface band at the Fermi level.
Pis’ma Zh. éksp. Teor. Fiz. 66, No. 1, 27–30 (10 July 1997) |
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