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Destruction and appearance of surface metallization in the system K/Si(111) 7×37
Authors:G V Benemanskaya  D V Daineka  G É Frank-Kamenetskaya
Institution:(1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) St. Petersburg Technological Institute, 198013 St. Petersburg, Russia
Abstract:Qualitative changes are observed in the character of the surface electronic structure accompanying the adsorption of potassium on a Si(111) 7×7 surface. The metallic conductivity of the Si(111)7×7 surface is destroyed at the very early stages of adsorption. A new band induced by the adsorption of potassium is observed below the Fermi level. It is found that the K/Si(111)7×7 interface is semiconducting right up to saturating coverage. A surface transition from an insulating into a metallic state, accompanied by pinning of the Fermi level, is observed in the region of saturating coverage. Metallic conductivity arises in the adsorbed potassium layer as a result of the development of an induced surface band at the Fermi level. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 1, 27–30 (10 July 1997)
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