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Effect of ambient hydrogen sulfide on the physical properties of vacuum evaporated thin films of zinc sulfide
Authors:Beer Pal Singh  Virendra Singh  T.P. Sharma
Affiliation:a Department of Physics, C.C.S. University, Meerut 250004, India
b Forensic Science Laboratory, Malviya Nagar, New Delhi 110017, India
Abstract:Evaporated thin films of zinc sulfide (ZnS) have been deposited in a low ambient atmosphere of hydrogen sulfide (H2S ∼10−4 Torr). The H2S atmosphere was obtained by a controlled thermal decomposition of thiourea [CS(NH2)2] inside the vacuum chamber. It has been observed that at elevated substrates temperature of about 200 °C helps eject any sulfur atoms deposited due to thermal decomposition of ZnS during evaporation. The zinc ions promptly recombine with H2S to give better stoichiometry of the deposited films. Optical spectroscopy, X-ray diffraction patterns and scanning electron micrographs depict the better crystallites and uniformity of films deposited by this technique. These deposited films were found to be more adherent to the substrates and are pinhole free, which is a very vital factor in device fabrication.
Keywords:78.20.Ci   78.50.Ge   78.66.&minus  w   78.66.Hf
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