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Properties of ZnO thin films grown on Si substrates by photo-assisted MOCVD |
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| Authors: | Xiangping Li Huichao Zhu Xiaochuan Xia Keke Huang |
| Institution: | a State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, PR China b State Key Laboratory for Materials Modification by Laser, Ion, and Electron Beams & Department of Physics, Dalian University of Technology, Dalian 116024, PR China c State Key Laboratory of Inorganic Synthesis and Preparation Chemistry, Jilin University, Qianjin Street 2699, Changchun 130012, PR China |
| Abstract: | ZnO thin films were grown on (1 0 0) p-Si substrates by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) using diethylzinc (DEZn) and O2 as source materials and tungsten-halogen lamp as a light source. The effects of tungsten-halogen lamp irradiation on the surface morphology, structural and optical properties of the deposited ZnO films have been investigated by means of atomic force microscope (AFM), X-ray diffraction and photoluminescence (PL) spectra measurements. Compared with the samples without irradiation, the several characteristics of ZnO films with irradiation are improved, including an improvement in the crystallinity of c-axis orientation, an increase in the grain size and an improvement in optical quality of ZnO films. These results indicated that light irradiation played an important role in the growth of ZnO films by PA-MOCVD. |
| Keywords: | 68 37 Ps 78 55 Et 81 05 Dz 81 15 Gh |
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