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Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors |
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| Authors: | Kongping WuShulin Gu Kun TangJiandong Ye Shunming ZhuMengran Zhou Yourui HuangMingxiang Xu Rong ZhangYoudou Zheng |
| Affiliation: | a School of Electrical and Information Engineering, Anhui University of Science and Technology, Huainan, Anhui 232001, People's Republic of China b Nanjing National Laboratory of Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China c Department of Physics, Southeast University, Nanjing 210096, China |
| Abstract: | The influences of Mn doping on the structural quality of the ZnxMn1−xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for ZnxMn1−xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different TC should explain that the magnetic transition in field-cooled magnetization of Zn1−xMnxO:N films at low temperature is caused by the strong p-d exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O. |
| Keywords: | Diluted magnetic semiconductor ZnxMn1&minus xO:N Room-temperature ferromagnetism |
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